Total: 84
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
Through-Hole
bulk
TR
box
TR,CT
CT
pipe
Digi-Reel®
On sale
Final sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
100 V
80 V
40 V
200 V
400 V
600 V
1000 V
800 V
30 V
60 V
300 V
650 V
900 V
1A
10A(DC)
1.5A
500mA
2A
3A
5A
700mA
5A(DC)
3A(DC)
215mA
140mA
450 mV @ 1 A
1.1 V @ 1 A
1.3 V @ 1 A
980 mV @ 1 A
550 mV @ 1 A
1.2 V @ 1 A
1 V @ 1 A
1.3 V @ 2 A
1.7 V @ 10 A
550 mV @ 2 A
510 mV @ 1 A
450 mV @ 3 A
450 mV @ 500 mA
470 mV @ 1 A
460 mV @ 1.5 A
980 mV @ 5 A
470 mV @ 500 mA
980 mV @ 3 A
580 mV @ 1 A
450 mV @ 2 A
1.3 V @ 3 A
550 mV @ 3 A
980 mV @ 2 A
370 mV @ 5 A
360 mV @ 1 A
360 mV @ 1.5 A
1.1 V @ 2 A
1.8 V @ 3 A
390 mV @ 1 A
2.7 V @ 500 mA
580 mV @ 100 mA
2.5 V @ 500 mA
370 mV @ 3 A
1.1 V @ 700 mA
2 V @ 700 mA
950 mV @ 500 mA
3 V @ 500 mA
2 V @ 1 A
2 V @ 2 A
580 mV @ 2 A
400 mV @ 3 A
1.8 V @ 1 A
1.8 V @ 2 A
0.98 V @ 5 A
1.8 V @ 5 A
35 ns
100 ns
0 ns
1.5 ns
2 µA @ 25 V
1 mA @ 30 V
50 µA @ 600 V
10 µA @ 400 V
200 µA @ 30 V
200 µA @ 40 V
5 µA @ 600 V
50 µA @ 30 V
10 µA @ 600 V
10 µA @ 200 V
500 µA @ 40 V
5 µA @ 400 V
100 µA @ 30 V
10 µA @ 100 V
10 µA @ 800 V
100 µA @ 40 V
500 µA @ 30 V
100 µA @ 60 V
200 µA @ 60 V
10 µA @ 300 V
100 µA @ 20 V
1.5 mA @ 30 V
50 µA @ 800 V
5 mA @ 30 V
8 mA @ 30 V
90 µA @ 650 V
50 µA @ 900 V